FDC636P
MOSFET P-CH 20V 2.8A SUPERSOT6Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDC636P is a P-Channel MOSFET designed for efficient power management applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 2.8A at 25°C. With a low on-resistance of 130mOhm at 2.8A and 4.5V Vgs, it minimizes conduction losses. The device operates with a Gate-Source voltage range of ±8V, and a threshold voltage (Vgs(th)) of 1V at 250µA, with optimized drive voltages at 2.5V and 4.5V. Key parameters include a maximum Gate Charge (Qg) of 8.5 nC at 4.5V and an input capacitance (Ciss) of 390 pF at 10V Vds. The FDC636P is housed in a SuperSOT™-6 package, suitable for surface mounting, and supports an operating temperature range of -55°C to 150°C. This MOSFET is commonly utilized in consumer electronics, portable devices, and general-purpose switching applications. The full description specifies 1.6W (Ta) power dissipation in a Surface Mount configuration.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 2.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SuperSOT™-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 10 V |