FDC610PZ-G
P-CHANNEL 30 V 4.9A (TA) 1.6W (TManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FDC610PZ-G is a P-Channel MOSFET from the PowerTrench® series, designed for efficient power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 4.9A at 25°C. The Rds On is specified at a maximum of 42mOhm at 4.9A and 10V Vgs. Gate charge (Qg) is a maximum of 24 nC at 10V Vgs, and input capacitance (Ciss) is 1005 pF at 15V. The MOSFET supports gate drive voltages from 4.5V to 10V, with a maximum Vgs of ±25V. With a maximum power dissipation of 800mW (Ta), it is suitable for operation across a wide temperature range of -55°C to 150°C (TJ). Packaged in a TSOT-23-6, it is supplied on tape and reel. This component finds application in areas such as battery management, power supplies, and motor control.
Additional Information
Series: PowerTrench®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 4.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TSOT-23-6 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1005 pF @ 15 V |
| Qualification | - |
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