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FDC5612-G

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FDC5612-G

MOSFET N-CH 60V SUPERSOT6

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi N-Channel PowerTrench® MOSFET, part number FDC5612-G, features a 60V drain-source voltage and a continuous drain current of 4.3A at 25°C. This SuperSOT™-6 packaged device offers a maximum on-resistance of 55mOhm at 4.3A and 10V Vgs. Key parameters include a gate charge of 18 nC at 10V and an input capacitance of 650 pF at 25V. With a maximum power dissipation of 800mW, this component is suitable for surface mount applications and operates across a temperature range of -55°C to 150°C. This MOSFET is utilized in industrial and computing applications.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4.3A (Ta)
Rds On (Max) @ Id, Vgs55mOhm @ 4.3A, 10V
FET Feature-
Power Dissipation (Max)800mW (Ta)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageSuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds650 pF @ 25 V

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