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FDC3616N

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FDC3616N

MOSFET N-CH 100V 3.7A SUPERSOT6

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDC3616N is a PowerTrench® series N-Channel MOSFET designed for efficient power switching applications. This device features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 3.7A at 25°C (Ta), with a maximum power dissipation of 2W (Ta). The on-resistance (Rds On) is specified as 70mOhm maximum at 3.7A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 32 nC maximum at 10V and an input capacitance (Ciss) of 1215 pF maximum at 50V. The MOSFET is housed in a SuperSOT™-6 FLMP package, suitable for surface mounting. Operating temperature ranges from -55°C to 150°C (TJ). This component finds application in various industries including industrial and consumer electronics. The FDC3616N is supplied in Tape & Reel packaging.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-SSOT Flat-lead, SuperSOT™-6 FLMP
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.7A (Ta)
Rds On (Max) @ Id, Vgs70mOhm @ 3.7A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageSuperSOT™-6 FLMP
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1215 pF @ 50 V

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