FDC30N20DZ
MOSFET N-CH 30V 4.6A SUPERSOT6Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FDC30N20DZ is an N-Channel MOSFET designed for efficient power switching applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 4.6A at 25°C ambient temperature. The low on-resistance of 31mOhm is achieved at 4.6A and 10V gate-source voltage. With a maximum power dissipation of 960mW (Ta), it is suitable for thermal management in compact designs. The SuperSOT™-6 package offers a small footprint for surface mounting, beneficial in consumer electronics, industrial control systems, and automotive applications. Key parameters include a gate charge of 7.9 nC (max) at 10V and input capacitance of 535 pF (max) at 15V. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 960mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SuperSOT™-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 535 pF @ 15 V |
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