Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

FDC2512-P

Banner
productimage

FDC2512-P

MOSFET N-CH 150V SUPERSOT6

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDC2512-P is an N-Channel Power MOSFET from the PowerTrench® series, housed in a SuperSOT™-6 package. This component features a Drain-Source Voltage (Vdss) of 150 V and a continuous drain current (Id) of 1.4A at 25°C, with a maximum power dissipation of 800mW (Ta). The Rds On is specified at a maximum of 425mOhm at 1.4A and 10V Vgs. Key parameters include input capacitance (Ciss) of 344 pF at 75V Vds and a gate charge (Qg) of 11 nC at 10V Vgs. It supports drive voltages from 6V to 10V and has a Vgs(th) maximum of 4V at 250µA. The operating temperature range is -55°C to 150°C. This device is suitable for applications in power management and industrial systems.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.4A (Ta)
Rds On (Max) @ Id, Vgs425mOhm @ 1.4A, 10V
FET Feature-
Power Dissipation (Max)800mW (Ta)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageSuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds344 pF @ 75 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
FDN338P

MOSFET P-CH 20V 1.6A SUPERSOT3

product image
FDG6332C

MOSFET N/P-CH 20V 0.7A SC88

product image
FDC6420C

MOSFET N/P-CH 20V 3A/2.2A SSOT6