FDC021N30
MOSFET N-CH 30V 6.1A SUPERSOT6Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDC021N30 is a N-Channel Power Trench® MOSFET designed for efficient power switching applications. This component features a 30V drain-to-source voltage rating and can handle a continuous drain current of 6.1A at 25°C. With a low on-resistance of 26mOhm at 6.1A and 10V Vgs, it minimizes conduction losses. The MOSFET is packaged in a SuperSOT™-6 (SOT-23-6 Thin, TSOT-23-6) for surface mounting and offers a maximum power dissipation of 700mW. Key parameters include a gate charge of 10.8 nC at 10V Vgs and an input capacitance of 710 pF at 15V Vds. It operates across a temperature range of -55°C to 150°C. This device is suitable for use in power management, consumer electronics, and industrial applications.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 6.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SuperSOT™-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 15 V |
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