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FDBL9406L-F085

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FDBL9406L-F085

MOSFET N-CH 40V 43A/240A 8HPSOF

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDBL9406L-F085 is an N-Channel Power MOSFET designed for demanding applications. This component features a 40V drain-source breakdown voltage and offers a continuous drain current capability of 43A at 25°C ambient, scaling to 240A under typical case temperature conditions. With a low on-resistance of 1.1mOhm at 80A and 10V Vgs, it minimizes conduction losses. The device supports gate drive voltages from 4.5V to 10V and has a maximum gate charge of 121 nC at 10V, facilitating efficient switching. Rated for a maximum power dissipation of 3.5W ambient and 300W case, the FDBL9406L-F085 operates within a junction temperature range of -55°C to 175°C. Packaged in an 8-HPSOF (8-PowerSFN) surface mount configuration and qualified to AEC-Q101, this MOSFET is suitable for automotive and industrial power systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C43A (Ta), 240A (Tc)
Rds On (Max) @ Id, Vgs1.1mOhm @ 80A, 10V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-HPSOF
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8600 pF @ 20 V
QualificationAEC-Q101

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