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FDB9409L-F085

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FDB9409L-F085

MOSFET N-CH 40V 90A D2PAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi's FDB9409L-F085 is an N-Channel Power MOSFET from the PowerTrench® series, packaged in a TO-263 (D2PAK) surface-mount configuration. This device features a 40V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 90A at 25°C (Tc). The Rds On is specified at a maximum of 2.9mOhm at 80A and 10V Vgs. Key parameters include a gate charge (Qg) of 68 nC at 10V Vgs and input capacitance (Ciss) of 3360 pF at 20V Vds. With a maximum power dissipation of 94W (Tj) and an operating temperature range of -55°C to 175°C (TJ), this AEC-Q101 qualified component is suitable for automotive applications.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Rds On (Max) @ Id, Vgs2.9mOhm @ 80A, 10V
FET Feature-
Power Dissipation (Max)94W (Tj)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3360 pF @ 20 V
QualificationAEC-Q101

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