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FDB8880

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FDB8880

MOSFET N-CH 30V 11A/54A TO263AB

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDB8880 is an N-Channel PowerTrench® MOSFET designed for efficient power management applications. This device features a Drain-Source voltage (Vdss) of 30V and offers a continuous drain current of 11A at ambient temperature (Ta) and 54A at case temperature (Tc), with a maximum power dissipation of 55W (Tc). The low on-resistance of 11.6mOhm at 40A and 10V (Id, Vgs) is achieved through advanced MOSFET technology. Key parameters include a gate charge (Qg) of 29 nC at 10V and input capacitance (Ciss) of 1240 pF at 15V. The FDB8880 is housed in a TO-263-3, D2PAK surface mount package, making it suitable for demanding thermal environments. This component finds application in power conversion, motor control, and battery management systems across various industrial sectors. The operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs11.6mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)55W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1240 pF @ 15 V

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