FDB8874
MOSFET N-CH 30V 21A/121A TO263ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDB8874 is an N-Channel PowerTrench® MOSFET designed for high-efficiency power switching applications. This device features a 30V drain-source breakdown voltage (Vdss) and offers a continuous drain current of 21A at ambient temperature (Ta) and up to 121A at case temperature (Tc). With a maximum power dissipation of 110W (Tc), it is suitable for demanding thermal environments. The low on-resistance of 4.7mOhm at 40A, 10V (Rds On) minimizes conduction losses. Gate drive voltages range from 4.5V to 10V. Key parameters include a maximum gate charge (Qg) of 72 nC and an input capacitance (Ciss) of 3130 pF. The TO-263 (D2PAK) surface mount package facilitates integration into compact designs. This MOSFET is utilized in industries such as automotive, industrial power supplies, and consumer electronics. It operates across an extended temperature range of -55°C to 175°C (TJ).
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 121A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3130 pF @ 15 V |
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