FDB8860
MOSFET N-CH 30V 80A TO263ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDB8860 is a high-performance N-Channel Power MOSFET from the PowerTrench® series. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain current (Id) of 80A at 25°C (Tc). Its low on-resistance, specified at a maximum of 2.3mOhm at 80A and 10V Vgs, ensures efficient power transfer. The device boasts a maximum power dissipation of 254W (Tc). Designed for surface mounting, it utilizes the TO-263AB (D2PAK) package. Key electrical characteristics include a Gate Charge (Qg) of 214 nC (max) at 10V Vgs and an Input Capacitance (Ciss) of 12585 pF (max) at 15V Vds. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for applications in power management, automotive, and industrial sectors.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 254W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 214 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12585 pF @ 15 V |
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