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FDB86569-F085

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FDB86569-F085

MOSFET N-CH 60V 80A D2PAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi PowerTrench® FDB86569-F085 is an N-Channel MOSFET designed for high-performance power switching applications. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 80A at 25°C (Tc). The low on-resistance is specified at a maximum of 5.6mOhm at 80A and 10V Vgs. Key electrical characteristics include a gate charge (Qg) of 52nC (max) at 10V and input capacitance (Ciss) of 2520pF (max) at 30V. The device supports a maximum gate-source voltage of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA. With a maximum power dissipation of 94W (Tj), it is suitable for demanding thermal environments. This MOSFET is housed in a TO-263-3, D2PAK package, enabling efficient surface mounting. It is qualified to AEC-Q101 standards and is classified as Automotive grade, making it suitable for use in automotive systems, industrial power supplies, and motor control applications. The operating temperature range is -55°C to 175°C (TJ). The component is supplied in Tape & Reel packaging.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs5.6mOhm @ 80A, 10V
FET Feature-
Power Dissipation (Max)94W (Tj)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2520 pF @ 30 V
QualificationAEC-Q101

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