FDB86566-F085
MOSFET N-CH 60V 110A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDB86566-F085 is a PowerTrench® series N-Channel MOSFET designed for demanding applications. This component features a 60V drain-source voltage and a continuous drain current capability of 110A at 25°C (Tc), with a maximum power dissipation of 176W (Tj). The low on-resistance of 2.7mOhm is achieved at 80A and 10V gate drive. Key parameters include a gate charge (Qg) of 110 nC at 10V and input capacitance (Ciss) of 6655 pF at 30V. The FDB86566-F085 is housed in a surface-mount TO-263-3, D2PAK package and operates across a temperature range of -55°C to 175°C (TJ). Qualified to AEC-Q101 standards, this MOSFET is suitable for automotive applications.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 176W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6655 pF @ 30 V |
| Qualification | AEC-Q101 |
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