FDB86366-F085
MOSFET N-CH 80V 110A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDB86366-F085 is an N-Channel PowerTrench® MOSFET designed for demanding applications. This component features a Drain to Source Voltage (Vdss) of 80V and a continuous drain current rating of 110A at 25°C (Tc). With a low on-resistance of 3.6mOhm at 80A and 10V Vgs, it offers efficient power handling, dissipating up to 176W (Tj). The component is housed in a TO-263-3, D2PAK surface mount package, facilitating streamlined board assembly. Key electrical characteristics include a maximum gate charge (Qg) of 112 nC at 10V and input capacitance (Ciss) of 6280 pF at 40V. This AEC-Q101 qualified device is suitable for automotive applications, operating within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 176W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 112 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6280 pF @ 40 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
FDN338P
MOSFET P-CH 20V 1.6A SUPERSOT3
FDG6332C
MOSFET N/P-CH 20V 0.7A SC88
FDC6420C
MOSFET N/P-CH 20V 3A/2.2A SSOT6
