FDB86363-F085
MOSFET N-CH 80V 110A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDB86363-F085 is an N-Channel PowerTrench® MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) of 110A at 25°C, with a maximum power dissipation of 300W (Tc). The low on-resistance of 2.4mOhm is achieved at 80A and 10V gate drive. Key specifications include a gate charge (Qg) of 150 nC at 10V and input capacitance (Ciss) of 10000 pF at 40V. Qualified to AEC-Q101 standards and supplied in a TO-263 (D2PAK) surface mount package, this MOSFET is suitable for automotive and high-power switching circuits. It operates within a temperature range of -55°C to 175°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10000 pF @ 40 V |
| Qualification | AEC-Q101 |
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