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FDB8453LZ

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FDB8453LZ

MOSFET N-CH 40V 16.1A/50A TO263

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi PowerTrench® N-Channel MOSFET, part number FDB8453LZ. This TO-263 (D2PAK) surface mount device features a 40V Drain-Source Voltage (Vdss) and a continuous drain current of 16.1A at ambient temperature, or 50A at case temperature. With a low Rds(on) of 7mOhm at 17.6A and 10V Vgs, this MOSFET offers efficient power handling with a maximum power dissipation of 3.1W (Ta) and 66W (Tc). Key parameters include a gate charge of 66 nC at 10V and an input capacitance of 3545 pF at 20V. The operating temperature range is -55°C to 150°C. This component is commonly utilized in power supply units, motor control, and battery management systems.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16.1A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs7mOhm @ 17.6A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3545 pF @ 20 V

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