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FDB8447L

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FDB8447L

MOSFET N-CH 40V 15A/50A TO263AB

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDB8447L is a PowerTrench® series N-Channel MOSFET designed for demanding applications. This component features a 40V drain-to-source voltage (Vdss) and supports continuous drain currents of 15A at ambient temperature (Ta) and 50A at case temperature (Tc). The device exhibits a low on-resistance of 8.5mOhm maximum at 14A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 52 nC maximum at 10V and input capacitance (Ciss) of 2620 pF maximum at 20V. With a maximum power dissipation of 3.1W (Ta) and 60W (Tc), and an operating temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for power management solutions in industries such as automotive and industrial power. The FDB8447L is supplied in a TO-263AB (D2PAK) surface mount package, delivered on tape and reel.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs8.5mOhm @ 14A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2620 pF @ 20 V

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