FDB8444
MOSFET N-CH 40V 70A TO263ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDB8444 is a N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 40 V and a continuous Drain Current (Id) of 70 A at 25°C (Tc), with a maximum power dissipation of 167 W (Tc). The FDB8444 exhibits a low on-resistance of 5.5mOhm at 70A and 10V, facilitated by its PowerTrench® technology. Key parameters include a Gate Charge (Qg) of 128 nC at 10 V and an input capacitance (Ciss) of 8035 pF at 25 V. This MOSFET is housed in a TO-263-3, D2PAK (TO-263AB) surface mount package, suitable for operation across an extended temperature range of -55°C to 175°C (TJ). Applications for this device span industrial power supplies, automotive systems, and high-power motor control.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 128 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8035 pF @ 25 V |
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