FDB8030L
MOSFET N-CH 30V 80A TO263ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDB8030L is a PowerTrench® series N-Channel MOSFET designed for power management applications. This TO-263AB packaged device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 80A at 25°C (Ta), with a maximum power dissipation of 187W (Tc). Optimized for low on-resistance, it achieves a maximum Rds On of 3.5mOhm at 80A and 10V. Key parameters include a 4.5V to 10V drive voltage range, a gate charge (Qg) of 170 nC at 5V, and an input capacitance (Ciss) of 10500 pF at 15V. Operating across a temperature range of -65°C to 175°C (TJ), this surface mount component is suitable for industries such as computing, industrial power, and automotive.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 187W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10500 pF @ 15 V |
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