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FDB6030L

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FDB6030L

MOSFET N-CH 30V 48A TO263AB

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDB6030L is an N-Channel Power MOSFET from the PowerTrench® series, offered in a TO-263AB package. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) capability of 48A at 25°C (Ta), with a maximum power dissipation of 52W (Tc). The low on-resistance is specified as 13mOhm at 26A and 10V gate drive. Key parameters include a gate charge (Qg) of 18nC (max) at 5V and input capacitance (Ciss) of 1250pF (max) at 15V. It supports a wide operating temperature range from -65°C to 175°C (TJ) and accepts gate-source voltages up to ±20V. This surface mount component is suitable for applications in power management and switching circuits across various industrial sectors.

Additional Information

Series: PowerTrench®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C48A (Ta)
Rds On (Max) @ Id, Vgs13mOhm @ 26A, 10V
FET Feature-
Power Dissipation (Max)52W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1250 pF @ 15 V

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