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FDB3672-F085

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FDB3672-F085

MOSFET N-CH 100V 7.2A/44A TO263

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDB3672-F085 is a PowerTrench® N-Channel MOSFET designed for demanding applications. This device features a 100V drain-source breakdown voltage and offers a continuous drain current capability of 7.2A at ambient temperature and 44A at case temperature. With a maximum power dissipation of 120W (Tc), it is suitable for robust thermal management. The low on-resistance of 28mOhm is specified at 44A and 10V gate-source voltage, indicative of efficient conduction. Key characteristics include a gate charge of 31 nC at 10V and input capacitance of 1710 pF at 25V. This component is housed in a TO-263 (D2PAK) surface-mount package and is qualified to AEC-Q101 standards, making it appropriate for automotive applications. It operates across a temperature range of -55°C to 175°C (TJ).

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7.2A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs28mOhm @ 44A, 10V
FET Feature-
Power Dissipation (Max)120W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1710 pF @ 25 V
QualificationAEC-Q101

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