FDB3652-F085
MOSFET N-CH 100V 9A/61A TO263ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDB3652-F085 is a PowerTrench® N-channel MOSFET designed for efficient power management. This component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 9 A at ambient temperature, increasing to 61 A at case temperature. It offers a low on-resistance (Rds On) of 16 mOhm at 61 A and 10 V Vgs. The device supports gate drive voltages from 6 V to 10 V, with a maximum gate-source voltage of ±20 V. Key characteristics include a maximum power dissipation of 150 W (Tc) and a typical input capacitance (Ciss) of 2880 pF at 25 V. The FDB3652-F085 is packaged in a TO-263AB (D2PAK) surface-mount configuration, suitable for demanding applications. Its AEC-Q101 qualification indicates suitability for automotive environments, and its parameters make it a strong candidate for power switching and motor control applications.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 61A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 61A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2880 pF @ 25 V |
| Qualification | AEC-Q101 |
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