FDB3632-F085
MOSFET N-CH 100V 12A TO263ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi PowerTrench® N-Channel MOSFET, part number FDB3632-F085. This AEC-Q101 qualified device features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 12A at 25°C. The low on-resistance, specified as 9mOhm maximum at 80A and 10V, is achieved through advanced MOSFET technology. With a gate charge (Qg) of 110 nC at 10V and input capacitance (Ciss) of 6000 pF at 25V, this component is designed for efficient switching. The TO-263AB package, also known as D2PAK, allows for surface mounting and supports a maximum power dissipation of 310W at the case temperature. Operating across a temperature range of -55°C to 175°C, this MOSFET is suitable for automotive applications.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V |
| Qualification | AEC-Q101 |
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