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FDB3502

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FDB3502

MOSFET N-CH 75V 6A/14A TO263AB

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDB3502 is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 75 V and a continuous drain current capability of 6 A at 25°C ambient and 14 A at 25°C case temperature. With a maximum Rds(on) of 47 mOhm at 6 A and 10 V, it offers low conduction losses. The MOSFET exhibits a maximum gate charge (Qg) of 15 nC at 10 V and an input capacitance (Ciss) of 815 pF at 40 V. The TO-263AB (D2PAK) surface mount package provides a robust solution for thermal management, with a maximum power dissipation of 3.1 W (Ta) and 41 W (Tc). Operating temperature range is -55°C to 150°C. This component is commonly utilized in power supplies, motor control, and battery management systems.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs47mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds815 pF @ 40 V

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