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FDB2552-F085

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FDB2552-F085

MOSFET N CH 150V 5A TO-263AB

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDB2552-F085 is a PowerTrench® N-Channel MOSFET designed for high-efficiency power switching applications. This AEC-Q101 qualified component features a Drain-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 5A (Ta) or 37A (Tc). With a low Rds On of 36mOhm at 16A and 10V Vgs, it offers minimal conduction losses. The MOSFET handles a maximum power dissipation of 150W (Tc) and is housed in a TO-263AB (D2PAK) surface mount package, supplied on tape and reel. Key parameters include a gate charge (Qg) of 51 nC @ 10V and input capacitance (Ciss) of 2800 pF @ 25V. This device is suitable for automotive and industrial power conversion systems.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs36mOhm @ 16A, 10V
FET Feature-
Power Dissipation (Max)150W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2800 pF @ 25 V
QualificationAEC-Q101

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