FDB12N50FTM-WS
MOSFET N-CH 500V 11.5A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi UniFET™ FDB12N50FTM-WS is an N-Channel Power MOSFET designed for high voltage applications. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 11.5A at 25°C (Tc). With a maximum power dissipation of 165W (Tc) and a low on-resistance of 700mOhm at 6A and 10V drive, it offers efficient switching performance. Key parameters include a Gate Charge (Qg) of 30 nC at 10V and an input capacitance (Ciss) of 1395 pF at 25V. The device is housed in a TO-263 (D2PAK) surface mount package, suitable for automated assembly. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in power supply units, lighting, and motor control applications.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 165W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1395 pF @ 25 V |
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