FDB070AN06A0-F085
MOSFET N-CH 60V 15A TO263ABManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDB070AN06A0-F085 is a PowerTrench® series N-Channel MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 15A (Ta), with a maximum power dissipation of 175W (Tc). The low on-resistance (Rds On) of 7mOhm is achieved at 80A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 66 nC @ 10V and Input Capacitance (Ciss) of 3000 pF @ 25V, with a maximum Vgs of ±20V and a threshold voltage (Vgs(th)) of 4V @ 250µA. This MOSFET is housed in a TO-263-3, D2PAK (TO-263AB) surface mount package, suitable for high-density designs. It is AEC-Q101 qualified and operates across a temperature range of -55°C to 175°C (TJ), making it suitable for automotive and industrial power switching applications. The component is supplied in Tape & Reel packaging.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 175W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
| Qualification | AEC-Q101 |
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