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FDB0690N1507L

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FDB0690N1507L

MOSFET N-CH 150V 3.8A TO263-7

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDB0690N1507L is an N-Channel Power MOSFET designed for demanding power management applications. This device features a drain-source voltage (Vdss) of 150V and a continuous drain current (Id) of 3.8A at 25°C (Tc). With a maximum on-resistance (Rds On) of 6.9mOhm at 17A and 10V, it offers efficient power transfer. The MOSFET is housed in a TO-263-7 (D2PAK) surface-mount package, facilitating integration into compact designs. Key parameters include a gate charge (Qg) of 115 nC at 10V and input capacitance (Ciss) of 8775 pF at 75V. It is rated for a maximum power dissipation of 250W (Tc) and operates across a temperature range of -55°C to 175°C (TJ). This component is suitable for use in power supplies, motor control, and automotive applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.8A (Tc)
Rds On (Max) @ Id, Vgs6.9mOhm @ 17A, 10V
FET Feature-
Power Dissipation (Max)250W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263-7
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8775 pF @ 75 V

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