FDB045AN08A0-F085C
MOSFETManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDB045AN08A0-F085C is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 75V and a continuous drain current capability of 19A at ambient temperature and 90A at case temperature. With a maximum power dissipation of 310W (Tc) and a low on-resistance (Rds On) of 4.5mOhm at 80A and 10V gate drive, it ensures efficient power transfer. The FDB045AN08A0-F085C utilizes MOSFET technology and is housed in a surface mount TO-263 (D2PAK) package, suitable for high-density board designs. Key electrical characteristics include a gate charge (Qg) of 138 nC (max) at 10V and input capacitance (Ciss) of 6600 pF (max) at 25V. Operating temperature ranges from -55°C to 175°C (TJ). This component is commonly found in automotive, industrial power control, and high-power conversion systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 138 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6600 pF @ 25 V |
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