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FDB035AN06A0-F085

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FDB035AN06A0-F085

MOSFET N-CH 60V 22A D2PAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDB035AN06A0-F085 is a PowerTrench® series N-Channel MOSFET designed for demanding applications. This component features a maximum drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 22A at 25°C. Its low on-resistance (Rds On) of 3.5mOhm at 80A and 10V gate drive voltage ensures efficient power handling. The device offers a maximum power dissipation of 310W (Tc) and a junction temperature range of -55°C to 175°C. Packaged in a TO-263 (D2PAK) surface mount configuration, it is AEC-Q101 qualified, making it suitable for automotive and high-power switching applications. Key parameters include a gate charge (Qg) of 124 nC at 10V and input capacitance (Ciss) of 6400 pF at 25V.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C22A (Ta)
Rds On (Max) @ Id, Vgs3.5mOhm @ 80A, 10V
FET Feature-
Power Dissipation (Max)310W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6400 pF @ 25 V
QualificationAEC-Q101

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