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FDB031N08

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FDB031N08

MOSFET N-CH 75V 120A D2PAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDB031N08 is an N-Channel Power MOSFET from the PowerTrench® series, designed for high-efficiency power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 75V and a continuous Drain Current (Id) of 120A at 25°C (Tc). The Rds(On) is specified at a maximum of 3.1mOhm at 75A and 10V Vgs, indicating low conduction losses. With a maximum power dissipation of 375W (Tc), it is suitable for demanding thermal environments. The device utilizes MOSFET technology and is provided in a TO-263-3, D2PAK surface mount package, commonly used in automotive, industrial power supplies, and power management systems. Key electrical characteristics include a gate charge (Qg) of 220 nC at 10V and input capacitance (Ciss) of 15160 pF at 25V. The operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs3.1mOhm @ 75A, 10V
FET Feature-
Power Dissipation (Max)375W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds15160 pF @ 25 V

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