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FDB0300N1007L

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FDB0300N1007L

MOSFET N-CH 100V 200A TO263-7

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDB0300N1007L is a PowerTrench® series N-Channel MOSFET designed for demanding power applications. This TO-263-7 packaged component features a drain-to-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 200 A at 25°C (Tc). Its low on-resistance (Rds On) is 3 mOhm maximum at 26 A and 10 V gate-source voltage. The device offers a maximum power dissipation of 3.8 W (Ta) and 250 W (Tc). Key characteristics include a gate charge (Qg) of 113 nC maximum at 10 V and input capacitance (Ciss) of 8295 pF maximum at 50 V. It supports drive voltages from 6 V to 10 V and has a maximum gate-source voltage (Vgs) of ±20 V. The MOSFET is suitable for surface mounting and operates within a temperature range of -55°C to 175°C (TJ). This component finds application in sectors such as automotive and industrial power management. It is supplied in Tape & Reel packaging.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Rds On (Max) @ Id, Vgs3mOhm @ 26A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263-7
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8295 pF @ 50 V

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