FDB024N06
MOSFET N-CH 60V 120A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDB024N06 is an N-Channel Power MOSFET from the PowerTrench® series, designed for demanding applications. This component features a 60V Drain-Source Voltage (Vdss) and a continuous drain current capability of 120A at 25°C, with a maximum power dissipation of 395W. The Rds(on) is specified at a low 2.4mOhm at 75A and 10V gate drive, facilitated by a 10V drive voltage. Key electrical parameters include a gate charge (Qg) of 226 nC and an input capacitance (Ciss) of 14885 pF. The device is housed in a TO-263 (D2PAK) surface mount package and operates across a temperature range of -55°C to 175°C. This MOSFET is suitable for power management solutions in automotive and industrial sectors.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 395W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 226 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14885 pF @ 25 V |
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