FDB024N04AL7
MOSFET N-CH 40V 100A TO263-7Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi FDB024N04AL7 is an N-Channel Power MOSFET from the PowerTrench® series, designed for high-performance switching applications. This component features a Drain-to-Source Voltage (Vdss) of 40V and a continuous drain current (Id) of 100A at 25°C, with a maximum power dissipation of 214W (Tc). The Rds On (Max) is specified at 2.4mOhm at 80A and 10V gate drive, indicating low conduction losses. Key parameters include a Gate Charge (Qg) of 109 nC (Max) @ 10V and Input Capacitance (Ciss) of 7300 pF (Max) @ 25V. The device is housed in a TO-263-7 (D2PAK) surface mount package and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for applications in automotive, industrial power supplies, and motor control systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 109 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7300 pF @ 25 V |
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