FDB016N04AL7
MOSFET N-CH 40V 160A TO263-7Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDB016N04AL7 is an N-Channel MOSFET featuring a 40V drain-source voltage rating and a continuous drain current capability of 160A (Tc). This device utilizes onsemi's PowerTrench® technology, offering optimized switching performance. With a low on-resistance of 1.6mOhm at 80A and 10V Vgs, it achieves a maximum power dissipation of 283W (Tc). The FDB016N04AL7 is supplied in a TO-263-7 package, suitable for surface mounting, and operates across a temperature range of -55°C to 175°C. Key electrical characteristics include a gate charge of 167 nC at 10V and input capacitance of 11600 pF at 25V. This component finds application in power management systems and automotive electronics.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 283W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 167 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11600 pF @ 25 V |
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