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FDB0105N407L

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FDB0105N407L

MOSFET N-CH 40V 460A TO263-7

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDB0105N407L is an N-Channel PowerTrench® MOSFET designed for high-current switching applications. This TO-263-7 packaged device offers a continuous drain current capability of 460A at 25°C (Tc) and a drain to source voltage (Vdss) of 40V. It features a low on-resistance (Rds On) of 0.8mOhm maximum at 50A and 10V gate drive. Key parameters include a gate charge (Qg) of 291 nC at 10V and input capacitance (Ciss) of 23100 pF at 20V. The device supports a wide operating temperature range from -55°C to 175°C (TJ). Its robust thermal performance is demonstrated by a maximum power dissipation of 3.8W (Ta) and 300W (Tc). This component is commonly utilized in power supply, automotive, and industrial motor control sectors. The FDB0105N407L is supplied in Tape & Reel packaging.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C460A (Tc)
Rds On (Max) @ Id, Vgs0.8mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263-7
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs291 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds23100 pF @ 20 V

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