FDAF59N30
MOSFET N-CH 300V 34A TO3PFManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi UniFET™ MOSFET N-Channel, part number FDAF59N30. This component features a Drain to Source Voltage (Vdss) of 300V and a continuous drain current (Id) of 34A at 25°C (Tc). The Rds On is a maximum of 56mOhm at 17A and 10V, with a gate charge (Qg) of 100 nC at 10V. Input capacitance (Ciss) is 4670 pF at 25V. The device offers a maximum power dissipation of 161W (Tc) and is packaged in a TO-3PF through-hole mount. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for applications in power supply, lighting, and motor control.
Additional Information
Series: UniFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 161W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4670 pF @ 25 V |
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