FDA79N15
MOSFET N-CH 150V 79A TO3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UniFET™ series FDA79N15 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This through-hole component offers a Drain-Source Voltage (Vdss) of 150 V and a continuous Drain Current (Id) of 79 A at 25°C (Tc). Featuring a maximum On-Resistance (Rds On) of 30 mOhm at 39.5 A and 10 V, it provides low conduction losses. The device boasts a high power dissipation capability of 417 W (Tc) and a low Gate Charge (Qg) of 73 nC at 10 V, contributing to efficient switching performance. With a maximum Vgs of ±30 V and a Gate Threshold Voltage (Vgs(th)) of 5 V at 250 µA, it is suitable for driving with standard gate drive voltages. The TO-3PN package ensures robust thermal management. This component finds application in power supplies, motor control, and industrial power systems.
Additional Information
Series: UniFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 79A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 39.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 417W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3410 pF @ 25 V |