FDA75N28
MOSFET N-CH 280V 75A TO3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UniFET™ series FDA75N28 is an N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-to-Source Voltage (Vdss) of 280V, this device offers a continuous Drain Current (Id) of 75A at 25°C (Tc) and a maximum power dissipation of 520W (Tc). With a low on-resistance (Rds On) of 41mOhm at 37.5A and 10V Vgs, the FDA75N28 minimizes conduction losses. The TO-3PN package provides robust thermal performance and a through-hole mounting type. Key electrical parameters include a Gate Charge (Qg) of 144 nC at 10V and Input Capacitance (Ciss) of 6700 pF at 25V. This MOSFET is suitable for power supply, power factor correction, and motor drive applications within industrial and automotive sectors.
Additional Information
Series: UniFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 37.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 280 V |
| Gate Charge (Qg) (Max) @ Vgs | 144 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6700 pF @ 25 V |
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