FDA70N20
MOSFET N-CH 200V 70A TO3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi UniFET™ series FDA70N20 is an N-Channel Power MOSFET designed for high-performance applications. This device features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 70A at 25°C (Tc). With a maximum power dissipation of 417W (Tc) and a low on-resistance of 35mOhm at 35A and 10V, the FDA70N20 offers efficient power handling. Key electrical parameters include a Gate Charge (Qg) of 86 nC at 10V and an Input Capacitance (Ciss) of 3970 pF at 25V. The MOSFET utilizes Metal Oxide technology and is packaged in a TO-3PN (TO-3P-3, SC-65-3) through-hole configuration. This component is suitable for use in power supply, motor control, and industrial applications. Operating temperature range is -55°C to 150°C (TJ), with a maximum Gate-Source Voltage (Vgs) of ±30V and a threshold voltage (Vgs(th)) of 5V at 250µA.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 417W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3970 pF @ 25 V |
Request a Quote
Clients Also Buy
FDD18N20LZ
MOSFET N-CH 200V 16A DPAK
FDB28N30TM
MOSFET N-CH 300V 28A D2PAK
FDPF51N25
MOSFET N-CH 250V 51A TO220F
