FDA50N50
MOSFET N-CH 500V 48A TO3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UniFET™ FDA50N50 is a 500V N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a continuous drain current (Id) of 48A at 25°C (Tc) and a maximum power dissipation of 625W (Tc). The low on-resistance of 105mOhm at 24A and 10V (Vgs) minimizes conduction losses. With a drain-source voltage (Vdss) of 500V and a gate-source voltage (Vgs) tolerance of ±20V, it offers robust performance. Key electrical parameters include a gate charge (Qg) of 137 nC at 10V and input capacitance (Ciss) of 6460 pF at 25V. The TO-3PN package facilitates through-hole mounting and thermal management, making it suitable for demanding applications in power supplies, motor control, and industrial equipment. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 625W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 137 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6460 pF @ 25 V |
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