FDA33N25
MOSFET N-CH 250V 33A TO3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UniFET™ series N-Channel MOSFET, part number FDA33N25, offers a 250V drain-source voltage (Vdss) and a continuous drain current (Id) of 33A at 25°C (Tc). With a maximum power dissipation of 245W (Tc), this through-hole TO-3PN packaged device features a low on-resistance of 94mOhm maximum at 16.5A and 10V gate-source voltage. Key electrical parameters include a gate charge (Qg) of 46.8 nC maximum at 10V and an input capacitance (Ciss) of 2200 pF maximum at 25V. Designed for demanding applications, this MOSFET is suitable for use in power supply units, motor control, and industrial power conversion systems. It operates within a junction temperature range of -55°C to 150°C and supports a maximum gate-source voltage of ±30V.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 94mOhm @ 16.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 245W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 46.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
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