FDA28N50F
MOSFET N-CH 500V 28A TO3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UniFET™ series N-Channel MOSFET, part number FDA28N50F, offers a 500 V drain-to-source voltage capability with a continuous drain current of 28 A at 25°C. This device features a maximum on-resistance of 175 mOhm at 14 A and 10 V gate-source voltage. Key parameters include a gate charge of 105 nC at 10 V and an input capacitance of 5387 pF at 25 V. With a maximum power dissipation of 310 W at 25°C, it is housed in a TO-3PN package suitable for through-hole mounting. The device operates within a temperature range of -55°C to 150°C. This MOSFET is commonly employed in power supply applications, industrial motor control, and lighting solutions.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5387 pF @ 25 V |
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