FDA24N50
MOSFET N-CH 500V 24A TO3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UniFET™ FDA24N50 is a 500V N-Channel Power MOSFET designed for efficient power switching applications. This device features a continuous drain current capability of 24A at 25°C (Tc) and a maximum power dissipation of 270W (Tc). The Rds(On) is specified at 190mOhm maximum at 12A and 10V Vgs. Key parameters include a Vgs(th) of 5V at 250µA and a gate charge (Qg) of 85nC at 10V. Input capacitance (Ciss) is 4150pF at 25V. The component is housed in a TO-3PN package, suitable for through-hole mounting. This MOSFET is utilized in industries such as power supplies, motor control, and lighting. Operating temperature range is -55°C to 150°C (TJ) with a maximum Vgs of ±30V.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 270W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4150 pF @ 25 V |
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