FDA24N40F
MOSFET N-CH 400V 23A TO3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UniFET™ FDA24N40F is an N-Channel Power MOSFET designed for high-voltage applications. This device features a drain-source voltage (Vdss) of 400 V and a continuous drain current (Id) of 23 A at 25°C (Tc). With a maximum power dissipation of 235 W (Tc) and a low on-resistance (Rds On) of 190 mOhm at 11.5 A and 10 V, it offers efficient switching performance. The device exhibits a typical gate charge (Qg) of 60 nC at 10 V and an input capacitance (Ciss) of 3030 pF at 25 V. The FDA24N40F utilizes Metal Oxide technology and is housed in a TO-3PN package, suitable for through-hole mounting. It is rated for operation across an extended temperature range of -55°C to 150°C (TJ). This component finds application in power supply units, lighting, and motor control systems.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 11.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 235W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3030 pF @ 25 V |
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