FDA20N50F
MOSFET N-CH 500V 22A TO3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FRFET®, UniFET™ series FDA20N50F is an N-Channel MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 22A at 25°C, with a maximum power dissipation of 388W at the same temperature. The on-resistance (Rds On) is specified at 260mOhm maximum at 11A and 10V gate-source voltage. Key electrical parameters include a gate charge (Qg) of 65 nC maximum at 10V and input capacitance (Ciss) of 3390 pF maximum at 25V. The device operates across a temperature range of -55°C to 150°C. This through-hole component is supplied in a TO-3PN package. Applications include power factor correction, lighting, and switch mode power supplies.
Additional Information
Series: FRFET®, UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 388W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3390 pF @ 25 V |
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