FDA20N50-F109
MOSFET N-CH 500V 22A TO3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi UniFET™ FDA20N50-F109 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. Featuring a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 22A at 25°C, this component offers a maximum power dissipation of 280W. The Rds On is specified at 230mOhm maximum at 11A and 10V Vgs. Key parameters include a gate charge (Qg) of 59.5 nC and input capacitance (Ciss) of 3120 pF, both measured at specified voltages. The device operates within a temperature range of -55°C to 150°C and comes in a TO-3PN through-hole package. This MOSFET is suitable for use in power supplies, motor control, and lighting applications.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 280W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 59.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3120 pF @ 25 V |
Request a Quote
Clients Also Buy
FDD18N20LZ
MOSFET N-CH 200V 16A DPAK
FDB28N30TM
MOSFET N-CH 300V 28A D2PAK
FDPF51N25
MOSFET N-CH 250V 51A TO220F
