FDA16N50LDTU
MOSFET N-CH 500V 16.5A TO3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDA16N50LDTU is a 500V N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a continuous drain current capability of 16.5A (Tc) and a maximum power dissipation of 205W (Tc). With a low on-resistance of 380mOhm at 8.3A and 10V, it minimizes conduction losses. The device is housed in a TO-3PN (L-Forming) through-hole package, facilitating robust thermal management. Key parameters include a gate charge of 45 nC @ 10V and input capacitance of 1945 pF @ 25V. This MOSFET is suitable for use in power factor correction, switch mode power supplies, and general purpose power switching across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3, Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 8.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 205W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PN (L-Forming) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1945 pF @ 25 V |
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