FCU900N60Z
MOSFET N-CH 600V 4.5A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FCU900N60Z, a SuperFET® II N-Channel MOSFET, offers a 600V drain-to-source voltage and 4.5A continuous drain current at 25°C (Tc). This through-hole component features a maximum on-resistance of 900mOhm at 2.3A and 10V Vgs, with a typical input capacitance (Ciss) of 710 pF at 25V. The IPAK package (TO-251-3 Stub Leads) is suitable for applications requiring efficient power switching. Key parameters include a gate charge (Qg) of 17 nC at 10V and a gate-source voltage (Vgs) tolerance up to ±20V. This device is utilized in power supply, lighting, and motor control applications.
Additional Information
Series: SuperFET® IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 25 V |
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